DocumentCode :
503083
Title :
A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies
Author :
Smith, Jeremy C. ; Boselli, Gianluca
Author_Institution :
ASIC Circuit Design Group, Texas Instrum. Inc., Austin, TX, USA
fYear :
2003
fDate :
21-25 Sept. 2003
Firstpage :
1
Lastpage :
9
Abstract :
A novel power supply protection clamp is presented which incorporates feedback techniques to improve ESD and normal operational mode behavior. The design uses a short duration RC trigger, which enables the clamp to tolerate very fast power supply ramp rates and exhibit reduced area and leakage. The design is built in a 90 nm CMOS technology with fully salicided source/drain regions.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor technology; trigger circuits; ESD protection; MOSFET power supply clamp; RC trigger; advanced CMOS technology; feedback enhanced triggering; fully salicided source/drain regions; power supply protection clamp; power supply ramp rates; size 90 nm; CMOS technology; Clamps; Electrostatic discharge; Feedback; MOSFET circuits; Power MOSFET; Power supplies; Protection; Rails; Variable structure systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NB
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
Type :
conf
Filename :
5272046
Link To Document :
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