Far-end maximum crosstalk for coupled lines as function of load

Author

Owzar, Amir ; Stephan, Ralph ; Petersen, Wesley ; Helfenstein, Markus

Author_Institution

Stericsson, Switzerland

fYear

2009

fDate

15-18 June 2009

Firstpage

1

Lastpage

4

Abstract

The move to 45 nm technology has seen a further reduction in the noise margin for CMOS devices. This has resulted in severe constraints on crosstalk between adjacent lines on the SIP (System-In-Package) substrate. The known formula in the literature for calculation of crosstalk between two coupled lines includes only the impact of the driver impedance but not the impact of the load capacitance. In this paper a formula has been developed to calculate the amplitude of coupled noise between two adjacent signal lines as a function of load capacitance.

Keywords

CMOS integrated circuits; crosstalk; driver circuits; integrated circuit noise; system-in-package; CMOS devices; circuit noise margin; coupled lines; driver impedance; far-end maximum crosstalk; load capacitance; system-in-package substrate; CMOS technology; Capacitance; Crosstalk; Dielectric materials; Frequency; Impedance; Noise level; Noise reduction; SPICE; Voltage; SIP; coupled lines; crosstalk; driver impedance; load capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Packaging Conference, 2009. EMPC 2009. European

Conference_Location

Rimini

Print_ISBN

978-1-4244-4722-0

Electronic_ISBN

978-0-6152-9868-9

Type

conf

Filename

5272973