Title :
Three-phase grid inverter with SiC JFETs and Schottky diodes
Author :
Rabkowski, Jacek ; Barlik, Roman
Author_Institution :
Dept. of Electr. Eng., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
This paper describes design, construction and tests of 2 kVA three-phase current source inverter with silicon carbide (SiC) JFETs and Schottky diodes. Low on-resistance and switching energies of SiC JFET lead to switching frequency increase to 100 kHz. In result size and weight of inverter is reduced. Operation of 2 kVA model is illustrated by laboratory results - measured efficiency at nominal conditions was 96,55%.
Keywords :
Schottky diodes; invertors; junction gate field effect transistors; Schottky diodes; SiC JFET; current source inverter; silicon carbide; three-phase grid inverter; Circuit testing; Circuit topology; Driver circuits; Inverters; JFETs; Power electronics; Schottky diodes; Silicon carbide; Switching frequency; Voltage; JFET; Silicon carbide; current source inverter;
Conference_Titel :
Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference
Conference_Location :
Lodz
Print_ISBN :
978-1-4244-4798-5
Electronic_ISBN :
978-83-928756-1-1
