• DocumentCode
    503287
  • Title

    A flip-chip single-pole three-throw switch with integrated bypass LNA for WLAN applications

  • Author

    Fox, Timothy ; Giacchino, Richard

  • Author_Institution
    MA-COM Technol. Solutions, Lowell, MA, USA
  • fYear
    2009
  • fDate
    28-29 Sept. 2009
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    A SP3T switch with an integrated bypass LNA has been designed as a flip-chip die using a GaAs E/D PHEMT process. The part consists of a standard three-throw switch with TX, RX and Bluetooth ports and includes a single-stage LNA featuring a low-gain/shut-off bypass path integrated on the die. The LNA bypass/shut-off functionality is achieved utilizing an enhancement-mode PHEMT to control biasing. GaAs wafer bumping is a technology that various M/A-COM Technology Solutions (MTS) customers are mandating in order to participate on next generation products. The main advantages of flip-chip technology over a conventional wire bonded plastic package are smaller footprint, reduced weight and improved electrical performance.
  • Keywords
    field effect transistor switches; flip-chip devices; low noise amplifiers; plastic packaging; wireless LAN; M/A-COM Technology Solutions; PHEMT process; WLAN applications; conventional wire bonded plastic package; flip-chip single-pole three-throw switch; integrated bypass LNA; wafer bumping; Bluetooth; Gallium arsenide; PHEMTs; Packaging; Plastics; Switches; Thermal conductivity; Wafer bonding; Wire; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wireless Technology Conference, 2009. EuWIT 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4721-3
  • Type

    conf

  • Filename
    5290907