DocumentCode :
503371
Title :
Thermal processes effecting upon waveform shaping in autodyne gunn diode oscillators
Author :
Noskov, V.Ya. ; Smolskiy, S.M.
Author_Institution :
USTU(UPI), Ekaterinburg, Russia
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
805
Lastpage :
808
Abstract :
The main factor influencing on system readiness time after power applying is the oscillator temperature variation due to self-heating of the oscillator diode. It is known that oscillator heating at its start leads to active and reactive conductance variation of the diode owing to which the amplitude and frequency variations occur as well as the respective differential parameters of diode about the steady-state. These variations influence upon the auto-detection and autodyne amplification factors as well as on the autodyne frequency deviation and the energy potential. Since it is impossible to eliminate completely this phenomenon, we must take it into account at development of each SRR.
Keywords :
Gunn diodes; Gunn oscillators; thermal analysis; active conductance variation; autodyne Gunn diode oscillator; autodyne amplification factors; reactive conductance variation; self-heating; thermal process effect; waveform shaping; Circuits; Diodes; Gunn devices; Helium; Oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5292867
Link To Document :
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