Title :
The influence of interelectrode capacity on MESFET stability at the impact of pulsed EM-field
Author :
Unzhakov, D. A. ; Zuyev, S. A. ; Gribskij, M. P. ; Starostenko, V. V. ; Glumova, M. V.
Abstract :
The article contains results of research of influence of bias current on Schotki FET resistibility in pulse electromagnetic fields. The basic relations used for direct calculation of bias current in FET model GaAs are given.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electromagnetic fields; gallium arsenide; MESFET stability; Schotki FET resistibility; interelectrode capacity; pulse electromagnetic fields; pulsed EM-field; Ambient intelligence; EMP radiation effects; Electromagnetic fields; FETs; Gallium arsenide; Geometry; Helium; MESFETs; Organizing; Stability;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
