Title :
Schematic methods of enhancing radiation hardness of CMOS LSI
Author_Institution :
Res. & Design Center Belmicrosystems, Res. & Production Corp. Integral, Minsk, Belarus
Abstract :
Analysis is conducted regarding the methods of enhancing CMOS LSI radiation hardness. The examples of CMOS LSI show, that the schematic methods are the most prospective from the point of view of ensuring reliability and radiation hardness.
Keywords :
CMOS integrated circuits; integrated circuit reliability; radiation hardening (electronics); CMOS LSI radiation hardness enhancement; reliability; schematic method; Circuits; Helium; IEEE catalog; Indium tin oxide; Inverters; Large scale integration; Organizing;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
