Title :
Electron transport in GaAs/AlAs quantum wire transistor structure in periodical electric field
Author :
Borzdov, A.V. ; Pozdnyakov, D. ; Borzdov, V.M.
Author_Institution :
Belarus State Univ., Minsk, Belarus
Abstract :
Monte-Carlo simulation of electron transport in GaAs/AlAs quantum wire transistor structure is performed in the periodical longitudinal electric field of harmonic type. The dependencies of electron drift velocity versus time for the steady-state transport regime are calculated at 77 K.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; semiconductor device models; semiconductor quantum wires; transistors; GaAs-AlAs; Monte-Carlo simulation; electron drift velocity; electron transport; periodical electric field; quantum wire transistor; steady-state transport; temperature 77 K; Electron mobility; Gallium arsenide; Helium; IEEE catalog; Organizing; Wire;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
