Title :
Gallium nitride resonant tunnelling diode
Author :
Goncharuk, N.M. ; Karushkin, N.F.
Author_Institution :
RI Orion, Kiev, Ukraine
Abstract :
A numerical model of semiconducting resonant tunnelling diode (RTD) on a base of AlGaN/GaN/AlGaN double-barrier quantum structure (DBQS) with a GaN transit layer is created. The functional connections of diode impedance and admittance versus the frequency of a variable signal, parameters of the DBQS and the transit layer are received and investigated. For the diode with an identical width of 1 nm of DBQS layers and an optimum height of input and output AlGaN potential barriers is 0.35 and 0.44 eV. The max negative conductance is close to -7, 5 and - 3 mS at frequencies 0.35 and 0.5 THz when the width of transit layer is equal to 63 and 132 nm accordingly. The higher frequency of a band of negative conductance of diode reaches 0.9 THz under typical parameters of series parasitic resistance of contact members.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave diodes; resonant tunnelling diodes; semiconductor device models; terahertz wave devices; wide band gap semiconductors; AlGaN-GaN-AlGaN; DBQS layers; diode admittance; diode impedance; double-barrier quantum structure; electron volt energy 0.35 eV; electron volt energy 0.44 eV; frequency 0.35 THz; frequency 0.5 THz; frequency 0.9 THz; gallium nitride resonant tunnelling diode; microwave impedance; negative conductance; numerical model; potential barriers; semiconductor RTD; series parasitic resistance; transit layer; Admittance; Aluminum gallium nitride; Frequency; Gallium nitride; III-V semiconductor materials; Impedance; Numerical models; Resonant tunneling devices; Semiconductivity; Semiconductor diodes;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1