Analysis of TID Failure Modes in SRAM-Based FPGA Under Gamma-Ray and Focused Synchrotron X-Ray Irradiation

Author

Lili Ding ; Hongxia Guo ; Wei Chen ; Zhibin Yao ; Yihua Yan ; Dongliang Chen ; Paccagnella, Alessandro ; Gerardin, Simone ; Bagatin, Marta ; Lei Chen ; Huabo Sun ; Ruyu Fan

Author_Institution

Dept. of Eng. Phys., Tsinghua Univ., Beijing, China

Volume

61

Issue

4

fYear

2014

fDate

Aug. 2014

Firstpage

1777

Lastpage

1784

Abstract

This study investigates the total ionizing dose effect in static random access memory (SRAM)-based field programmable gate array (FPGA). In addition toY ray whole-chip irradiation, focused synchrotron x-ray irradiation with beam size of 20 μm is also used. As a result, the most vulnerable inner circuit in the SRAM-based FPGA is determined directly. Circuit simulation is also executed to understand the failure phenomenon further. The simulated results are consistent with the experimental results.

Keywords

SRAM chips; circuit simulation; field programmable gate arrays; FPGA; SRAM; TID failure modes; circuit simulation; field programmable gate array; focused synchrotron X-ray irradiation; gamma-ray; size 20 mum; static random access memory; total ionizing dose effect; Circuit simulation; Degradation; Field programmable gate arrays; Photonics; Radiation effects; Random access memory; Synchrotrons; Failure modes; SRAM-based FPGA; focused synchrotron x-ray irradiation; total ionizing dose effect;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2314530

Filename

6832651