• DocumentCode
    503441
  • Title

    Photoluminescence of porous anodic alumina films with terbium incorporated by dipping

  • Author

    Gaponenko, N.V. ; Prislopski, S.Y. ; Molchan, I.S. ; Thompson, G.E.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    613
  • Lastpage
    614
  • Abstract
    Luminescent structures based on porous anodic alumina (PAA) of (3...50) mum thickness, comprising trivalent terbium ions within the pore channels, have been synthesised by dipping in salt solutions with the following thermal treatment at (200...600)degC. The photoluminescence of the structures has been examined. It has been revealed that luminescence intensity increases with the increase of PAA thickness. However, the maximum anisotropy of luminescence along the pore channels has been observed for PAA of 10 mum thickness.
  • Keywords
    alumina; heat treatment; photoluminescence; porous materials; terbium; thin films; Al2O3-Tb; PAA thickness; anisotropy; luminescence intensity; photoluminescent structure; pore channel; porous anodic alumina; size 10 mum; thermal treatment; trivalent terbium ion; Electrons; Hydrogen; IEEE catalog; Indium tin oxide; Organizing; Photoluminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292956