DocumentCode
503447
Title
Structure of films obtained as the result of oxidation and thermal treatment of nanostructured polycrystalline silicon doped by germanium
Author
Kovalevsky, A.A. ; Strogova, A.S. ; Plyakin, D.V.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
625
Lastpage
626
Abstract
The process of formation and properties of germanosilicate glass (GSG) films in the process of oxidation of nanostructured polycrystalline silicon doped by germanium films is investigated.
Keywords
dielectric thin films; germanate glasses; germanium; heat treatment; nanostructured materials; oxidation; silicon; GeSiOJk; Si:Ge; germanium; germanosilicate glass films; nanostructured polycrystalline silicon; oxidation; thermal treatment; Electromagnetic wave absorption; Germanium; Helium; IEEE catalog; Organizing; Oxidation; Positron emission tomography; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5292962
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