Aluminum based microstrip transmission lines

Author

Sokol, V.A. ; Demchenko, A.I. ; Vecher, D.V. ; Bez´yazychnaya, A.V.

Author_Institution

Res. & Production Corp. Integral, Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

573

Lastpage

574

Abstract

The analysis of applicability of aluminum oxide technology for development of communication elements of UHF- range devices was carried out. The availability of application of microstrip transmission lines based on aluminum films, located on aluminum substrates with the anode dielectric layer was estimated. The important argument towards the use of the aluminum bases is maximum power, which might be transmitted via the microstrip transmission lines in the continuous mode due to satisfactory heat sinking. The practical realization of the microstrip UHF-device is presented on the example of 3 cm oscillator on the basis of Gunn diode.

Keywords

Gunn diodes; UHF diodes; aluminium compounds; high-frequency transmission lines; microstrip lines; Al₂O₃; Gunn diode; UHF- range devices; anode dielectric layer; microstrip transmission lines; size 3 cm; Aluminum oxide; Anodes; Availability; Dielectric substrates; Gunn devices; Heat sinks; Microstrip; Oscillators; Power transmission lines; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-4796-1

Type

conf

Filename

5292973