Investigation of circuit diagram in metal-semiconductor contacts with schottki barrier using the method of atomic force

We have found out that current density distribution areally in a free contact (without a dielectric in circumferential direction) of semiconductor metal (SM) with Schottky barrier (SB) on the submicron level and the nanolevel is very incoherently. In the field of low currents with low tension the shift of the electrical circuit is determined by a narrow area (< 100 nm) in a circumferential direction of a contact. With the growth of tension in the contact we might see involvement of the rest area of the contact in the electrical circuit, in which it is determined by fractal nature of distribution of local (50 nm...200 nm) nonhomogeneities in current density. Conductivity of certain local parts in the contact area significantly differs, which leads to significant loss of efficiency of conductivity of the contact.