• DocumentCode
    503473
  • Title

    Negative temperature coefficient of breakdown voltage in the Au-Ti-n-n+ 6h SiC Schottky-barrier diodes

  • Author

    Belyaev, A.E. ; Boltovets, N.S. ; Konakova, R.V. ; Krivutsa, V.A. ; Kudryk, Ya.Ya. ; Lebedev, A.A. ; Milenin, V.V.

  • Author_Institution
    V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    537
  • Lastpage
    539
  • Abstract
    Temperature coefficient of breakdown voltage (TCBV) in the Au-Ti-n-n+-6H SiC diodes with Schottky barrier is investigated. It is shown that TCBV is negative in the (300...573) K temperature range. This seems to be caused by the effect of deep levels in the space-charge region of a diode on the breakdown.
  • Keywords
    Schottky barriers; Schottky diodes; electric breakdown; silicon compounds; Au-Ti; SiC; SiC Schottky-barrier diode; breakdown voltage; negative temperature coefficient; space-charge region; temperature range; Etching; Gold; Helium; Metallization; Silicon carbide; Spectroscopy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503473