Influence of interface fractal geometry on anamalous behaviour of capacity-voltage characteristic of metal-semiconductor contacts with Shottky barrier

With the use of a term of fractal surfaces there was proved that irregularities of a potential (barrier) and an electric charge in real metal-semiconductor interfaces with Schottky barrier had a fractal geometry, which in a local approximation influenced greatly on a behavior of capacity-voltage characteristics of metal-semiconductor contacts with Schottky barrier exerting in an anomalous increase of capacity of contacts while their diameters in a decreasing less than the limit of the local approximation.