Influence of interface fractal geometry on anomalous behaviour of volt-ampere characteristic of metal-semiconductor contacts with Shottky barrier

With the use of a term of fractal surfaces there was showed that real metal-semiconductor interfaces with Shottky barrier had been provided with a fractal geometry that in a local approximation had influenced greatly on a behavior of static volt ampere characteristics of metal-semiconductor contacts with Shottky barrier, exerting in an anomalous increase of direct currents, a decrease of series resistance, a barrier height and an increase of factor of perfectness with a decrease of a diameter of contacts.