• DocumentCode
    503477
  • Title

    Simulation of noise factor in gan field transistors using Monte Carlo technique

  • Author

    Muraviyov, V.V. ; Tamelo, A.A. ; Mishchenko, V.N. ; Molodkin, D.F.

  • Author_Institution
    Belarusian State Univ. Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    546
  • Lastpage
    547
  • Abstract
    The definition technique for noise parameters of field transistors is created and the block diagram for definition of noise characteristics by a method of Monte-Carlo is presented. Calculations of noise parameters for structures of AIII-BV type are resulted at various pressures at a gate and a drain. During calculation the minimum value of factor of noise for GaN NF ap1.159 dB has been received.
  • Keywords
    III-V semiconductors; Monte Carlo methods; field effect transistors; gallium compounds; semiconductor device models; semiconductor device noise; wide band gap semiconductors; GaN; GaN field transistors; Monte Carlo technique; noise factor; Gallium nitride; Monte Carlo methods; Noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503477