Simulation of carry processes and electronic properties of indium antimonide semiconductors

Calculations are carried out and the fundamental characteristics causing specificity of InSb material are obtained. The computing algorithm is developed; the program of numerical modeling by a method of Monte-Carlo for devices on the basis of InSb material is designed and debugged. The obtained theoretical results give possibility for creation of a wide scale of InSb semiconductor devices with improved frequency characteristics reaching quasi-optical range of frequencies.