DocumentCode :
50353
Title :
Light-Emitting Diodes Operating at 2 
With 10 mW Optical Power
Author :
Seungyong Jung ; Suchalkin, Sergey ; Kipshidze, G. ; Westerfeld, David ; Belenky, G.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume :
25
Issue :
23
fYear :
2013
fDate :
Dec.1, 2013
Firstpage :
2278
Lastpage :
2280
Abstract :
Light-emitting diodes emitting near 2 μm producing quasi-continuous wave optical power of at room temperature have been demonstrated. The combination of a strain-engineered quantum well active region and a cascaded injection scheme made it possible to achieve an internal efficiency of 120%. The higher wall plug efficiency of the two-cascade devices indicates that Auger recombination is primarily responsible for the efficiency drop at high injection levels.
Keywords :
Auger effect; electron-hole recombination; light emitting diodes; quantum well devices; Auger recombination; cascaded injection scheme; injection level; internal efficiency; light-emitting diodes; power 10 mW; quasicontinuous wave optical power; strain-engineered quantum well active region; temperature 293 K to 298 K; two-cascade devices; wall plug efficiency; wavelength 2 mum; Diode lasers; Light emitting diodes; Mathematical model; Optical pulses; Quantum cascade lasers; Radiative recombination; Stimulated emission; Cascading active region; GaSb; LEDs; infrared;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2285153
Filename :
6632895
Link To Document :
