DocumentCode
50353
Title
Light-Emitting Diodes Operating at 2
With 10 mW Optical Power
Author
Seungyong Jung ; Suchalkin, Sergey ; Kipshidze, G. ; Westerfeld, David ; Belenky, G.L.
Author_Institution
Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume
25
Issue
23
fYear
2013
fDate
Dec.1, 2013
Firstpage
2278
Lastpage
2280
Abstract
Light-emitting diodes emitting near 2 μm producing quasi-continuous wave optical power of at room temperature have been demonstrated. The combination of a strain-engineered quantum well active region and a cascaded injection scheme made it possible to achieve an internal efficiency of 120%. The higher wall plug efficiency of the two-cascade devices indicates that Auger recombination is primarily responsible for the efficiency drop at high injection levels.
Keywords
Auger effect; electron-hole recombination; light emitting diodes; quantum well devices; Auger recombination; cascaded injection scheme; injection level; internal efficiency; light-emitting diodes; power 10 mW; quasicontinuous wave optical power; strain-engineered quantum well active region; temperature 293 K to 298 K; two-cascade devices; wall plug efficiency; wavelength 2 mum; Diode lasers; Light emitting diodes; Mathematical model; Optical pulses; Quantum cascade lasers; Radiative recombination; Stimulated emission; Cascading active region; GaSb; LEDs; infrared;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2013.2285153
Filename
6632895
Link To Document