• DocumentCode
    50353
  • Title

    Light-Emitting Diodes Operating at 2 \\mu{\\rm m} With 10 mW Optical Power

  • Author

    Seungyong Jung ; Suchalkin, Sergey ; Kipshidze, G. ; Westerfeld, David ; Belenky, G.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., State Univ. of New York, Stony Brook, NY, USA
  • Volume
    25
  • Issue
    23
  • fYear
    2013
  • fDate
    Dec.1, 2013
  • Firstpage
    2278
  • Lastpage
    2280
  • Abstract
    Light-emitting diodes emitting near 2 μm producing quasi-continuous wave optical power of at room temperature have been demonstrated. The combination of a strain-engineered quantum well active region and a cascaded injection scheme made it possible to achieve an internal efficiency of 120%. The higher wall plug efficiency of the two-cascade devices indicates that Auger recombination is primarily responsible for the efficiency drop at high injection levels.
  • Keywords
    Auger effect; electron-hole recombination; light emitting diodes; quantum well devices; Auger recombination; cascaded injection scheme; injection level; internal efficiency; light-emitting diodes; power 10 mW; quasicontinuous wave optical power; strain-engineered quantum well active region; temperature 293 K to 298 K; two-cascade devices; wall plug efficiency; wavelength 2 mum; Diode lasers; Light emitting diodes; Mathematical model; Optical pulses; Quantum cascade lasers; Radiative recombination; Stimulated emission; Cascading active region; GaSb; LEDs; infrared;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2285153
  • Filename
    6632895