Title :
Design of table-based nonlinear model for pHEMT
Author :
Dmitrienko, K.S. ; Babak, L.I.
Author_Institution :
Tomsk State Univ. of Radioelectron. & Control Syst., Tomsk, Russia
Abstract :
A procedure for constructing of table-based nonlinear model of pHEMT is described and investigated. Standard nonlinear models of transistors presenting in commercially available simulators (such as Curtice-Ettenberg, Materka-Kacparzak, Angelov models, etc.) have several disadvantages while applying to pHEMTs. A procedure for constructing of universal table-based nonlinear model of pHEMT is described using measured C-V characteristics and small signal S-parameters for different biases. The accuracy of table-based model up to 60 GHz has been investigated for 0,18 um GaAs pHEMT with 6 times 50 um gate width. The model is incorporated in Microwave Office design environment.
Keywords :
high electron mobility transistors; Angelov models; Curtice-Ettenberg simulator; Materka-Kacparzak simulator; pHEMT; table-based nonlinear model; Equivalent circuits; Gallium arsenide; HEMTs; Helium; MESFETs; PHEMTs;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1