DocumentCode :
503647
Title :
Diodes with intervalley transfer on the basis of A3B5 nitride semiconductors
Author :
Storozhenko, I.P. ; Arkousha, Yu.V.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
125
Lastpage :
126
Abstract :
The frequency and power capabilities of Gunn diodes based upon nitride semiconductors A3B5 including variband semiconductor are evaluated using two-temperature model of intervalley electron transfer (IET). Availability of nitride semiconductors in TED´s is considered.
Keywords :
Gunn diodes; semiconductor materials; Gunn diode; intervalley electron transfer; nitride semiconductor; two-temperature model; variband semiconductor; Argon; Diodes; Gallium arsenide; Gallium nitride; Helium; Indium phosphide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5293191
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=503647
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