Title :
Substrate design enabling to increase HEMTs open channel breakdown voltage
Author :
Martynov, Y.B. ; Pogorelova, E.V.
Author_Institution :
FSUE RPC Istok, Russia
Abstract :
Avalanche-injection inconsistence in a substrate of a device is responsible for the open channel breakdown in FETs. Proposed substrate construction suppresses the advancing of inconsistence in HEMTs.
Keywords :
high electron mobility transistors; FET; HEMT open channel breakdown voltage; avalanche-injection inconsistence; substrate construction; substrate design; Gallium arsenide; HEMTs; Helium; Indium tin oxide; MODFETs; Substrates;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
