A 2 GS/s 450 MHz bandpass ΔΣ modulator for switch-mode power amplifier

Author

Ostrovskyy, P. ; Gustat, H. ; Scheytt, Ch

Author_Institution

IHP GmbH, Frankfurt (Oder), Germany

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

97

Lastpage

98

Abstract

This paper presents the design and implementation of a fourth order bandpass delta-sigma modulator (BDSM) for a signal carrier of 450 MHz, sampled at 2 GHz. Designed and fabricated in 0.25 mum SiGe BiCMOS technology the modulator achieves 42,2 dB signal-to-noise ratio (SNR) in 20 MHz bandwidth with sine wave input while consuming 330 mW from a 3.3 V supply. Measurement results show that the circuit is well suited for transmitting signals with a non-constant envelope and can be used as a driver for class-S power amplifiers. For a CDMA modulated signal the modulator demonstrates an error-vector magnitude (EVM) less than 2,7 %.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; delta-sigma modulation; power amplifiers; signal sampling; BiCMOS technology; Si-Ge; bandpass DeltaSigma modulator; bandpass delta-sigma modulator; bandwidth 20 MHz; class-S power amplifiers; code division multiple access; error-vector magnitude; frequency 2 GHz; frequency 450 MHz; power 330 mW; signal transmission; size 0.25 mum; switch-mode power amplifier; voltage 3.3 V; Bandwidth; BiCMOS integrated circuits; Delta modulation; Driver circuits; Germanium silicon alloys; Power amplifiers; Power measurement; Signal design; Signal to noise ratio; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-4796-1

Type

conf

Filename

5293213