• DocumentCode
    503679
  • Title

    UHF power amplifiers with wide-gap MESFET

  • Author

    Makarov, D.G. ; Krizhanovski, V.G. ; Kistchinsky, A.A.

  • Author_Institution
    Donetsk Nat. Univ., Donetsk, Ukraine
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    Calculation and simulation investigation of wideband power amplifiers of class E with the use of SiC and GaN MESFETs are carried out.
  • Keywords
    MESFET circuits; UHF power amplifiers; wideband amplifiers; GaN; SiC; UHF power amplifier; class E amplifier; simulation investigation; wide-gap MESFET; wideband power amplifier; Equivalent circuits; Gallium nitride; IEEE catalog; MESFETs; Organizing; Power amplifiers; Power generation; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5293231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503679