DocumentCode :
503680
Title :
2–4 GHz 50 W and 100 W wideband GaAs transistor power amplifier units
Author :
Bochkarev, D. ; Kistchinsky, A. ; Nikityn, D. ; Radchenko, A.
Author_Institution :
Microwave Syst. JSC, Moscow, Russia
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
69
Lastpage :
70
Abstract :
The results of a development and an experimental investigation of 50 Watt and 100 Watt wideband of units of GaAs transistor amplifiers of a range 2 - 4 GHz are presented. The units are based on serial wideband GaAs transistor amplifiers. There have been two units developed. A PM24-C8 times 2 unit consists of two serial wideband amplifiers PM24-C8 with identical gain-frequency and phase difference characteristics and two tandem couplers. The photograph of PM24-C8 times 2 is presented on Fig. 4. A PtVI24-C8 times 4 unit consists of four amplifiers PM24C8 and six tandem couplers. The picture of PM24-C8times4 is presented. The results of measurements of output power in a linear mode and saturation power of units. Modules of resulting parameters are presented. The size of PM24-C8 times 2 unit is 395 times 180 times 155 millimeters and size of PM24-C8 times 4 unit is 395 times 180 times 280 millimeters.
Keywords :
gallium arsenide; microwave amplifiers; microwave transistors; power amplifiers; power transistors; wideband amplifiers; frequency 2 GHz to 4 GHz; gain-frequency; power 100 W; power 50 W; tandem coupler; wideband GaAs transistor power amplifier unit; Broadband amplifiers; Gain; Gallium arsenide; Helium; IEEE catalog; Indium tin oxide; Organizing; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
Type :
conf
Filename :
5293235
Link To Document :
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