Title :
Complex two-level transistor for microwave power amplifiers
Author :
Iovdalsky, V.A. ; Pchelin, V.A. ; Lapin, V.G.
Author_Institution :
SSPE Istok, Fryazino, Russia
Abstract :
Original combined double-deck microwave FET has been realized and characterized. Power combining of two 1-Watt transistor crystals has been obtained at frequencies 3 and 6 GHz. These results verify the concept of a design of microwave IC based on two-floor parallel transistor crystal.
Keywords :
microwave field effect transistors; microwave power amplifiers; complex two-level transistor; double-deck microwave FET; frequency 3 GHz; frequency 6 GHz; microwave IC; microwave power amplifiers; two-floor parallel transistor crystal; Microwave amplifiers; Microwave transistors; Power amplifiers;
Conference_Titel :
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-4796-1
