• DocumentCode
    503709
  • Title

    59–71GHz wideband MMIC balanced power amplifier in a 0.13um SiGe technology

  • Author

    Demirel, Nejdat ; Kerhervé, Eric ; Plana, Robert ; Pache, Denis ; Belot, Didier

  • fYear
    2009
  • fDate
    28-29 Sept. 2009
  • Firstpage
    499
  • Lastpage
    502
  • Abstract
    This paper presents the performance of a wideband 0.13 mum BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17 dB of power gain from 59 GHz to 71 GHz. As a result, the amplifier delivers 18 dBm of maximum RF output power and 14.5 dBm output power at 1 dB compression. The circuit shows 7.8% of power added efficiency (PAE) from a 1.8 V supply voltage at 65 GHz. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors for high integration purpose.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; MIM devices; MMIC power amplifiers; coplanar waveguide components; differential amplifiers; low-power electronics; millimetre wave power amplifiers; network topology; power semiconductor devices; semiconductor materials; wideband amplifiers; BiCMOS millimeter wave amplifier; CPW lines; MIM capacitors; RF output power; SiGe; balanced four-stage common emitter circuit topology; bias circuit; complementary metal-oxide-semiconductor; coplanar waveguide; efficiency 7.8 percent; frequency 59 GHz to 71 GHz; matching networks; metal-insulator-metal; monolithic integrated low-voltage amplifier; monolithic microwave integrated circuit; power added efficiency; power gain; radiofrequency output power; supply voltage; voltage 1.8 V; wavelength 0.13 mum; wideband MMIC balanced power amplifier; Broadband amplifiers; Circuits; Coplanar waveguides; Germanium silicon alloys; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4749-7
  • Type

    conf

  • Filename
    5295904