• DocumentCode
    503716
  • Title

    Nanosecond pHEMT switches

  • Author

    Freeston, Andrew ; Varmazis, Costas ; Boles, Timothy

  • Author_Institution
    M/A-COM Technol. Solutions, Lowell, MA, USA
  • fYear
    2009
  • fDate
    28-29 Sept. 2009
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    In today´s world of rapidly changing technology, systems are being designed with speed in mind. From sensors to processors, every designer wants to avoid delay of all kinds. To maintain very high bandwidth and linearity performance while simultaneously minimizing consumed power, many engineers choose gallium arsenide pHEMT switch products for their designs. With the increasing pressure for systems to do things faster, device lag times have become critical parameters. To meet this need, a unique proprietary pHEMT technology to ensure rapid settling has been developed enabling the state-of-the-art to be advanced from a previous level of almost 300 microseconds to less than 20 nanoseconds as demonstrated by the efforts reported in this paper.
  • Keywords
    III-V semiconductors; field effect transistor switches; gallium arsenide; GaAs; bandwidth performance; critical parameters; device lag time; gallium arsenide; high electron mobility transistor; linearity performance; nanosecond pHEMT switches; power consumption; Bandwidth; Delay; Design engineering; Gallium arsenide; Linearity; Maintenance engineering; PHEMTs; Power engineering and energy; Process design; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4749-7
  • Type

    conf

  • Filename
    5295911