DocumentCode
503716
Title
Nanosecond pHEMT switches
Author
Freeston, Andrew ; Varmazis, Costas ; Boles, Timothy
Author_Institution
M/A-COM Technol. Solutions, Lowell, MA, USA
fYear
2009
fDate
28-29 Sept. 2009
Firstpage
13
Lastpage
16
Abstract
In today´s world of rapidly changing technology, systems are being designed with speed in mind. From sensors to processors, every designer wants to avoid delay of all kinds. To maintain very high bandwidth and linearity performance while simultaneously minimizing consumed power, many engineers choose gallium arsenide pHEMT switch products for their designs. With the increasing pressure for systems to do things faster, device lag times have become critical parameters. To meet this need, a unique proprietary pHEMT technology to ensure rapid settling has been developed enabling the state-of-the-art to be advanced from a previous level of almost 300 microseconds to less than 20 nanoseconds as demonstrated by the efforts reported in this paper.
Keywords
III-V semiconductors; field effect transistor switches; gallium arsenide; GaAs; bandwidth performance; critical parameters; device lag time; gallium arsenide; high electron mobility transistor; linearity performance; nanosecond pHEMT switches; power consumption; Bandwidth; Delay; Design engineering; Gallium arsenide; Linearity; Maintenance engineering; PHEMTs; Power engineering and energy; Process design; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location
Rome
Print_ISBN
978-1-4244-4749-7
Type
conf
Filename
5295911
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