Concurrent dual band 2.4/3.5GHz fully integrated power amplifier in 0.13µm CMOS technology

Author

Ghajar, Mohammad Reza ; Boumaiza, Slim

Author_Institution

Emerging Radio Syst. Group, Univ. of Waterloo, Waterloo, ON, Canada

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

375

Lastpage

378

Abstract

This paper proposes novel dual-band matching network, suitable for the design of integrated concurrent dual band power amplifier in a multi-standard radiofrequency frontend. The effectiveness of the proposed dual band matching network was demonstrated through the implementation of a power amplifier operating at 2.4 GHz and 3.5 GHz in IBM 0.13 mum CMOS technology. The designed 1.25 mm times 1.25 mm dual band PA allowed for Power Added Efficiency (PAE) and output power of about 42% and more than 18 dbm, respectively, at both frequencies.

Keywords

CMOS integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; field effect MMIC; software radio; CMOS technology; dual band fully integrated power amplifier; dual-band matching network; frequency 2.4 GHz; frequency 3.5 GHz; multistandard radiofrequency frontend; power added efficiency; size 0.13 mum; size 1.25 mm; software defined radio; Bandwidth; CMOS technology; Circuits; Dual band; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Signal processing; Switches; Dual band front ends; Integrated; Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5295919