• DocumentCode
    503738
  • Title

    Modelling and design of a wideband 6–18 GHz GaN resistive mixer

  • Author

    Di Giacomo, Valeria ; Thouvenin, Nicolas ; Gaquière, Christophe ; Santarelli, Alberto ; Filicori, Fabio

  • Author_Institution
    Dept. of Electron., Univ. of Bologna, Bologna, Italy
  • fYear
    2009
  • fDate
    Sept. 29 2009-Oct. 1 2009
  • Firstpage
    1812
  • Lastpage
    1815
  • Abstract
    A wideband hybrid AlGaN/GaN resistive mixer has been designed and simulated. The cold-FET mixer is based on a 2*100*0.25 μm2 AlGaN/GaN HEMT in a single-ended circuit topology. An application-specific empirical transistor model has been extracted and validated in small- and large-signal conditions, in order to carry out the mixer design and simulations. This mixer presents an IF bandwidth of 6 GHz with a conversion loss <; 16 dB for each RF and LO frequency choice from 6 up to 18 GHz.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; microwave mixers; AlGaN-GaN; AlGaN/GaN HEMT; cold-FET mixer; resistive mixer; single-ended circuit topology; Aluminum gallium nitride; Bandwidth; Circuit simulation; Circuit topology; Frequency conversion; Gallium nitride; HEMTs; Mixers; Radio frequency; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2009. EuMC 2009. European
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-4748-0
  • Type

    conf

  • Filename
    5295933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503738