Title :
GaN MMIC amplifiers for W-band transceivers
Author :
Masuda, Satoshi ; Ohki, Toshihiro ; Makiyama, Kozo ; Kanamura, Masahito ; Okamoto, Naoya ; Shigematsu, Hisao ; Imanishi, Kenji ; Kikkawa, Toshihide ; Joshin, Kazukiyo ; Hara, Naoki
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
This paper presents W-band monolithic microwave integrated circuit (MMIC) amplifiers with grounded coplanar waveguide (GCPW) in 0.12 μm GaN HEMT technology. A fabricated four-stage low-noise amplifier (LNA) exhibited a record gain of 23 dB at 76.5 GHz and a first reported noise figure (NF) of 3.8 dB at 80 GHz for any W-band GaN MMIC. Another MMIC power amplifier (PA) delivered an output power of 25.4 dBm at 76.5 GHz with continuous wave (CW) operation. To our knowledge, this is the first demonstration of GaN LNA as well as GaN MMICs with GCPW in the W-band. In addition, a practical design technique to prevent instability of the W-band MMIC is described.
Keywords :
III-V semiconductors; MMIC amplifiers; circuit noise; coplanar waveguides; gallium compounds; high electron mobility transistors; low noise amplifiers; transceivers; wide band gap semiconductors; GaN; HEMT technology; MMIC amplifiers; W-band transceivers; continuous wave operation; four-stage low-noise amplifier; frequency 75 GHz to 110 GHz; grounded coplanar waveguide; monolithic microwave integrated circuit amplifiers; noise figure; output power; size 0.12 mum; Coplanar waveguides; Gallium nitride; HEMTs; Integrated circuit technology; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers; Transceivers;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
