DocumentCode :
503768
Title :
Organic wafer-scale packaging for X-band SiGe low noise amplifier
Author :
Patterson, Chad E. ; Thrivikraman, Tushar K. ; Bhattacharya, Swapan K. ; Poh, Chung Hang John ; Cressler, John D. ; Papapolymerou, John
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2009
fDate :
Sept. 29 2009-Oct. 1 2009
Firstpage :
141
Lastpage :
144
Abstract :
This paper presents for the first time an organic Liquid Crystal Polymer (LCP) based System-on-Package module for an X-band SiGe low noise amplifier. The LNA is laminated with 2 mil LCP and via interconnects are fabricated. Measurements are made before and after packaging to ensure accurate comparison of amplifier performance. Before packaging, the LNA yielded 10.3 dB of gain, a minimum noise figure of 1.8 dB and a 50 Ω noise figure of 1.9 dB. After packaging, there was a 0.1 dB of loss in gain output, a 0.1 dB increase in minimum noise figure and a 0.6 dB increase in 50 Ω noise figure. It is shown that thin layers of LCP can be successfully used in a wafer level packaging scheme for hybrid integration of SiGe RF electronics and organic packaging layers.
Keywords :
Ge-Si alloys; liquid crystal polymers; low noise amplifiers; microwave amplifiers; system-on-package; wafer level packaging; RF electronics; SiGe; X-band low noise amplifier; gain 10.3 dB; loss 0.1 dB; noise figure 1.8 dB; noise figure 1.9 dB; organic liquid crystal polymer; organic packaging layers; organic wafer-scale packaging; resistance 50 ohm; system-on-package module; Coplanar waveguides; Dielectric materials; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Optical materials; Packaging; Radio frequency; Silicon germanium; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
Type :
conf
Filename :
5295965
Link To Document :
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