Characterization of Micromachined On-Wafer Probes for the 600–900 GHz Waveguide Band

Author

Bauwens, Matthew F. ; Lihan Chen ; Chunhu Zhang ; Arsenovic, Alexander I. ; Alijabbari, Naser ; Lichtenberger, Arthur W. ; Barker, N.S. ; Weikle, Robert M.

Author_Institution

Charles L. Brown Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA

Volume

4

Issue

4

fYear

2014

fDate

Jul-14

Firstpage

527

Lastpage

529

Abstract

A micromachined on-wafer probe has been designed to facilitate the development of integrated circuits in the 600-900 GHz frequency range. The probe tip is fabricated on a 5-micrometer thick high-resistivity silicon substrate using a silicon-on- insulator fabrication process. This letter updates previous work on WR-1.2 wafer probes and presents for the first time the full RF characterization of the probe. These are the first reported on-wafer measurements above 750 GHz.

Keywords

micromachining; silicon-on-insulator; submillimetre wave integrated circuits; waveguides; WR-1.2 wafer probes; frequency 600 GHz to 900 GHz; full RF characterization; high-resistivity silicon substrate; integrated circuits; micromachined on-wafer probe characterization; on-wafer measurements; silicon-on-insulator fabrication process; size 5 mum; waveguide band; Calibration; Coplanar waveguides; Loss measurement; Optical waveguides; Probes; Waveguide transitions; Micromachining; probes; submillimeter wave measurements; submillimeter-wave integrated circuits;

fLanguage

English

Journal_Title

Terahertz Science and Technology, IEEE Transactions on

Publisher

ieee

ISSN

2156-342X

Type

jour

DOI

10.1109/TTHZ.2014.2327381

Filename

6832657