DocumentCode :
504105
Title :
High-power GaAS photoconductive semiconductor switch triggered with picosecond laser pulse
Author :
Yuan, Jiaxin ; Xie, Wei ; Liu, Hongying ; Liu, Jiangchuan ; Li, Huaqing ; Wang, Xiongfei ; Jiang, Wei
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fYear :
2009
fDate :
21-25 Sept. 2009
Firstpage :
1
Lastpage :
3
Abstract :
In order to generate ultrafast electrical pulse by using photoconductive semiconductor switch (PCSS), a switch with a gap of 14 mm was fabricated from semi-insulating GaAs. Illuminated by laser pulse at wavelength of 1064 nm and 532 nm, photoconductivity tests of the PCSS were performed at different bias voltages. Preliminary experimental results suggest that the rise time of the current through the PCSS is significantly reduced when triggered by picosecond laser pulse. The experimental results with different optical energy are presented and discussed.
Keywords :
III-V semiconductors; gallium arsenide; optical pulse generation; photoconducting switches; semiconductor switches; GaAs; optical energy; photoconductive semiconductor switch; photoconductivity tests; picosecond laser pulse; wavelength 1064 nm; wavelength 532 nm; Gallium arsenide (GaAs); Photoconductive semiconductor switch (PCSS); Picosecond laser pulse;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Pulsed Power Conference, 2009 IET European
Conference_Location :
Geneva
ISSN :
0537-9989
Print_ISBN :
978-1-84919-144-9
Type :
conf
Filename :
5332181
Link To Document :
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