• DocumentCode
    504124
  • Title

    Wire explosion fed by a 32-kJ XRAM generator switched by semiconductor elements

  • Author

    Dedie, Philipp ; Brommer, Volker

  • Author_Institution
    German-French Res. Inst. of St. Louis (ISL), St. Louis, France
  • fYear
    2009
  • fDate
    21-25 Sept. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High-energy wire explosions are used e.g. in electrothermal-chemical (ETC) loads. For the first time, a wire explosion fed by a 32-kJ four-stage XRAM generator which is switched uniquely by semiconductor elements has been achieved. The difficulty when using semiconductors is that wire explosions generate high-voltage peaks which can potentially destroy the semiconductor elements in an XRAM circuit. By using an improved version of the countercurrent commutation principle well-adapted to the switching requirements of the XRAM generator and by choosing molybdenum as the wire material, we could overcome the high-voltage difficulty and successfully explode a 4-cmlong, 250-??m-thick wire with 32 kJ of electric energy, lasting for an 18-ms plasma discharge.
  • Keywords
    discharges (electric); molybdenum; pulse generators; pulsed power supplies; XRAM generator; countercurrent commutation principle; energy 32 kJ; high-energy wire explosions; high-voltage peaks; plasma discharge; semiconductor elements; size 250 mum; size 4 cm; Wire explosion; XRAM generator; countercurrent commutation; semiconductor opening switch;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Pulsed Power Conference, 2009 IET European
  • Conference_Location
    Geneva
  • ISSN
    0537-9989
  • Print_ISBN
    978-1-84919-144-9
  • Type

    conf

  • Filename
    5332200