Title :
Thermal Design and Constraints for Heterogeneous Integrated Chip Stacks and Isolation Technology Using Air Gap and Thermal Bridge
Author :
Yang Zhang ; Yue Zhang ; Bakir, M.S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper summarizes the thermal challenges in conventional 3-D stacks and proposes a novel stacking structure that eases the thermal problem. The objective of this paper is first to define limits and opportunities for developing different 3-D chip stacks from a thermal perspective, and second to explore our proposed system as a function of microbumps, through silicon vias, die thickness, and other design parameters. In our proposed 3-D stack, the interposer integrated microfluidic heat sink serves as the main heat sink. To thermally decouple stacked dice, we propose air gap isolation between them and a thermal bridge on top of the stack to cool down the isolated die. To evaluate the thermal benefits of the stack, a thermal model is developed based on the finite difference method. Several chip stack scenarios are studied and the simulations are conducted with a processor power of 74.63 W/cm2 and memory power of 2.82 W/cm2. The proposed architecture yielded processor and memory temperatures of 64°C and 40°C, respectively, compared with 76°C and 75°C for the air cooled stack.
Keywords :
air gaps; finite difference methods; heat sinks; integrated circuit design; integrated circuit modelling; isolation technology; microfluidics; thermal management (packaging); three-dimensional integrated circuits; 3D chip stacks; air cooled stack; air gap isolation; design parameters; die thickness; finite difference method; heterogeneous integrated chip stacks; interposer integrated microfluidic heat sink; isolation technology; memory power; memory temperatures; microbumps; processor power; temperature 40 degC; temperature 64 degC; temperature 75 degC; temperature 76 degC; thermal bridge; thermal design; thermal model; through silicon vias; DRAM chips; Heat sinks; Multicore processing; Thermal resistance; Three-dimensional integrated circuits; Through-silicon vias; 3-D integrated circuit (3-D IC); dynamic random-access memory (DRAM); microbumps; microfluidic heat sink (MFHS); multicore processor; through silicon vias (TSVs); through silicon vias (TSVs).;
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCPMT.2014.2364742