Silicon cantilever beam micromachining and structure geometry characterization

Author

Ionascu, G. ; Manea, E. ; Comeaga, C.D. ; Alexandrescu, N. ; Cernica, I. ; Bogatu, L.

Author_Institution

Mechatron. & Precision Eng. Dept., Politeh. Univ. of Bucharest, Bucharest, Romania

Volume

1

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

237

Lastpage

240

Abstract

A method to etch cantilever beams oriented in the <100> direction on (100) silicon wafers is presented. Backetching of the wafer, heavily doped boron etch stop, or anodic oxidation etch stop are not necessary. The method requires only two levels of masking and uses silicon dioxide as passivation material. Two techniques that offer information about the surface topography, SEM (scanning electron microscopy) and WLI (white light interferometry), were used.

Keywords

anodisation; beams (structures); cantilevers; elemental semiconductors; etching; light interferometry; masks; micromachining; micromechanical devices; passivation; scanning electron microscopy; silicon; surface topography; <100> direction; (100) silicon wafers; SEM; Si; WLI; anodic oxidation; backetching; cantilever beams; passivation; scanning electron microscopy; surface topography; white light interferometry; Boron; Etching; Geometry; Micromachining; Oxidation; Passivation; Scanning electron microscopy; Silicon compounds; Structural beams; Surface topography; SEM; anisotropic etching; bulk micromachining; silicon cantilever; white light interferometer;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336558

Filename

5336558