Title :
Special effects in triple gate MOSFETs fabricated on silicon-on-insulator (SOI)
Author :
Bae, Y. ; Na, K.-I. ; Cristoloveanu, S. ; Xiong, W. ; Cleavelin, C.R. ; Lee, J.-H.
Author_Institution :
Dept. of Electron. Eng., Uiduk Univ., Gyeongju, South Korea
Abstract :
The typical electrical properties of triple-gate SOI MOSFETs are investigated. The relationship between the short-channel effect (SCE) and the inter-gate coupling effect is studied as a function of the channel length and width. The three-dimensional coupling effect due to electric field penetration from substrate to channel, from source and drain to body, and from lateral gates to back interface is examined systematically by considering the fin width, channel length, and back bias variations. The gate-induced floating body effect (GIFBE), which shows partially depleted (PD) device properties in the fully depleted (FD) device is documented in n- and p-channel triplegate MOSFETs.
Keywords :
MOSFET; coupled circuits; silicon-on-insulator; channel length; channel width; electric field penetration; electrical property; gate-induced floating body effect; intergate coupling effect; partially depleted device; short-channel effect; silicon-on-insulator; triple-gate SOI MOSFET; Annealing; Carrier confinement; Controllability; FinFETs; Hydrogen; Instruments; Length measurement; MOSFETs; Silicon on insulator technology; Threshold voltage; GIFBE; SOI; coupling effect; narrow fin width effect; short-channel effect; supercoupling effect; triple-gate MOSFET;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336612
