DocumentCode :
505373
Title :
Devices based on semiconductor nanowires
Author :
Erts, D. ; Meija, R. ; Birjukovs, P. ; Andzane, J. ; Studers, M. ; Löhmus, R. ; Holmes, J.D.
Author_Institution :
Inst. of Chem. Phys., Univ. of Latvia, Riga, Latvia
Volume :
1
fYear :
2009
fDate :
12-14 Oct. 2009
Firstpage :
37
Lastpage :
47
Abstract :
Recently, nanoelectromechanical systems (NEMS) have attracted much attention due to their unique properties and possible applications that differ greatly from those of microelectromechanical systems. NEMS operating frequencies may achieve giga- and terahertz levels and their power consumption and heat capacity is extremely low. Moreover, integration levels may reach 1012 devices per cm-2. In this review, we present techniques for integrating semiconductor materials in NEMS. In particular, we examine fabrication, structure, properties and potential applications of two main classes of NEMS, namely, resonators and switches.
Keywords :
nanoelectromechanical devices; nanoelectronics; nanowires; resonators; switches; NEMS; nanoelectromechanical systems; resonators; semiconductor materials; semiconductor nanowires; switches; Chemical elements; Frequency; Gallium arsenide; Microelectromechanical systems; Nanoelectromechanical systems; Nanowires; Physics; Semiconductor materials; Silicon carbide; Switches; Nanoelectromechanical systems; resonator; semiconductor; switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-4413-7
Type :
conf
DOI :
10.1109/SMICND.2009.5336616
Filename :
5336616
Link To Document :
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