• DocumentCode
    505432
  • Title

    An improved general model for stacked PIN photovoltiac infrared photodetectors

  • Author

    Liang, Ben ; Chen, D. ; Wang, Bingdong ; Kwasnievski, T. ; Wang, Zhigong

  • Author_Institution
    Department of Electronics, Carleton University, Ottawa, Canada
  • fYear
    2009
  • fDate
    13-14 Oct. 2009
  • Firstpage
    92
  • Lastpage
    95
  • Abstract
    An improved general model to predict the ultimate performance of photovoltaic infrared photodetectors based on non-equilibrium carriers diffusion, and recombination properties of narrow bandgap semiconductors is presented. Optimal thickness of intrinsic absorption layer (Wopt), response quantum efficiency (RQE), detectivity (D*), −3dB cut-off frequency (f−3dB), are calculated and optimized for stacked PIN GaInAsSb/GaSb photodetectors. Ways to achieve optimal performance in practice, material and device structures are proposed.
  • Keywords
    component; model; photodetector; photovoltaic;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Microsystems and Nanoelectronics Research Conference, 2009. MNRC 2009. 2nd
  • Conference_Location
    Ottawa, ON, Canada
  • Print_ISBN
    978-1-4244-4751-0
  • Type

    conf

  • Filename
    5338951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505432