Title :
Method for in-situ reliability testing of TIM samples
Author :
Vass-Varnai, Andras ; Sarkany, Zoltan ; Rencz, Marta
Author_Institution :
MicReD Div., Mentor Graphics Hungary Ltd., Hungary
Abstract :
In this paper a possible method demonstrated for in-situ reliability testing of various TIM materials. The method is based on thermal transient measurements of a power semiconductor device in a TO-type package which has a flat, external cooling surface. By powering the junction of the semiconductor cyclically the whole assembly is exposed to intense thermal cycles in which the main heat-flow path leads through the TIM material. May the quality of the TIM change during the cycles the maximum junction temperature also changes.
Keywords :
cooling; power semiconductor devices; semiconductor device reliability; semiconductor device testing; semiconductor junctions; thermal management (packaging); thermal resistance; transients; TIM materials; TO-type package; external cooling surface; heat flow; in-situ reliability testing; interface material; junction temperature; power semiconductor device; semiconductor junction; thermal cycling; thermal management; thermal resistance; thermal transient measurement; Assembly; Cooling; Lead compounds; Materials reliability; Materials testing; Power measurement; Power semiconductor devices; Semiconductor device measurement; Semiconductor device packaging; Semiconductor materials;
Conference_Titel :
Thermal Investigations of ICs and Systems, 2009. THERMINIC 2009. 15th International Workshop on
Conference_Location :
Leuven
Print_ISBN :
978-1-4244-5881-3
