DocumentCode
505523
Title
Latent damage due to multiple ESD discharges
Author
Laasch, Ingo ; Ritter, Hans-Martin ; Werner, Achim
Author_Institution
NXP Semicond., Hamburg, Germany
fYear
2009
fDate
Aug. 30 2009-Sept. 4 2009
Firstpage
1
Lastpage
6
Abstract
ESD protection diodes are stressed with multiple discharges. We find a strong dependence of the maximum allowable number of stresses from the stress level. Ambient temperature and the pulse shape have an additional influence. Electrical characteristics are not altered till destruction. Physical failure analysis shows latent damage in the form of the gradual formation of a spike front that eventually shortens the junction.
Keywords
diodes; electrostatic discharge; failure analysis; ESD protection diodes; electrical characteristics; latent damage; multiple ESD discharges; physical failure analysis; pulse shape; stress level; Electric variables measurement; Electrostatic discharge; Leakage current; Protection; Pulse measurements; Semiconductor diodes; Stress measurement; Temperature; Testing; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
EOS/ESD Symposium, 2009 31st
Conference_Location
Anaheim, CA
Print_ISBN
978-1-58537-176-1
Electronic_ISBN
978-1-58537-176-1
Type
conf
Filename
5340110
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