Title :
A novel low voltage base-modulated SCR ESD device with low latch-up risk
Author :
Fan, Xiaofeng ; Chaine, Michael
Author_Institution :
Micron Technol., Inc., Boise, ID, USA
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
A novel low voltage base modulated SCR has been developed using a triple well CMOS process. External control circuits modulate the base pwell resistance, reduce the trigger currents from milliamps to microamps, and decouple holding and trigger voltages of the SCR during both ESD events and normal circuit operations.
Keywords :
CMOS integrated circuits; electrostatic discharge; elemental semiconductors; rectifiers; silicon; Si; base pwell resistance; base-modulated SCR ESD device; electrostatic discharge; external control circuits; holding voltages; low latch-up risk; silicon-controlled rectifier; trigger currents; trigger voltages; triple well CMOS process; CMOS process; CMOS technology; Diodes; Electrostatic discharge; Isolation technology; Low voltage; Protection; Switches; Switching circuits; Thyristors;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
