• DocumentCode
    505550
  • Title

    A novel low voltage base-modulated SCR ESD device with low latch-up risk

  • Author

    Fan, Xiaofeng ; Chaine, Michael

  • Author_Institution
    Micron Technol., Inc., Boise, ID, USA
  • fYear
    2009
  • fDate
    Aug. 30 2009-Sept. 4 2009
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    A novel low voltage base modulated SCR has been developed using a triple well CMOS process. External control circuits modulate the base pwell resistance, reduce the trigger currents from milliamps to microamps, and decouple holding and trigger voltages of the SCR during both ESD events and normal circuit operations.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; elemental semiconductors; rectifiers; silicon; Si; base pwell resistance; base-modulated SCR ESD device; electrostatic discharge; external control circuits; holding voltages; low latch-up risk; silicon-controlled rectifier; trigger currents; trigger voltages; triple well CMOS process; CMOS process; CMOS technology; Diodes; Electrostatic discharge; Isolation technology; Low voltage; Protection; Switches; Switching circuits; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    EOS/ESD Symposium, 2009 31st
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-58537-176-1
  • Electronic_ISBN
    978-1-58537-176-1
  • Type

    conf

  • Filename
    5340137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=505550