Title :
Next generation bulk FinFET devices and their benefits for ESD robustness
Author :
Griffoni, A. ; Thijs, S. ; Russ, C. ; Trémouilles, D. ; Linten, D. ; Scholz, M. ; Collaert, N. ; Witters, L. ; Meneghesso, G. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
This paper reports the first ESD results on NMOS and gated diode devices processed in a bulk FinFET technology. A comparison with SOI FinFET performance is carried out, highlighting the role of device geometry and three-dimensional architecture. Moreover, the ESD-RF performance of bulk FinFET gated diodes is evaluated and compared to SOI.
Keywords :
MOSFET; electrostatic discharge; semiconductor diodes; silicon-on-insulator; ESD; NMOS device; SOI FinFET; bulk FinFET gated diodes; electrostatic discharge; three-dimensional architecture; CMOS technology; Diodes; Electrostatic discharge; FinFETs; MOS devices; P-n junctions; Robustness; Silicon on insulator technology; Substrates; Voltage;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
