DocumentCode :
505560
Title :
ESD parameter extraction by TLP measurement
Author :
Fukuda, Yasuhiro ; Yamada, Tomomi ; Sawada, Masanori
Author_Institution :
Oki Eng. co., Ltd., Tokyo, Japan
fYear :
2009
fDate :
Aug. 30 2009-Sept. 4 2009
Firstpage :
1
Lastpage :
6
Abstract :
This paper is described the ESD protection design technique for the integrated circuits, used the ESD parameter extracted by TLP (Transmission Line Pulsing) measurement. The ESD parameters need to simulate the ESD surge inflow phenomena into the devices accurately. This study find that it is most important for ESD parameter extraction conditions to be selected the suitable TLP calibration method and choose TLP-IV extraction timing to fit its device performance to simulate the ESD model. Also, it is proposed the location analysis method to choose TLP-IV timing as the new extraction in this paper.
Keywords :
MOSFET; electrostatic discharge; semiconductor device breakdown; surges; transmission lines; ESD protection design; ESD surge inflow phenomena; GGNMOS protection; NMOSFET; TLP measurement; TLP-IV timing; breakdown characteristic; electrostatic discharge; gate grounded N-type metal oxide semiconductor protection; integrated circuits; parameter extraction; transmission line pulsing measurement; Biological system modeling; Circuit simulation; Distributed parameter circuits; Electrostatic discharge; Parameter extraction; Protection; Semiconductor devices; Silicon on insulator technology; Timing; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
Type :
conf
Filename :
5340147
Link To Document :
بازگشت