• DocumentCode
    505560
  • Title

    ESD parameter extraction by TLP measurement

  • Author

    Fukuda, Yasuhiro ; Yamada, Tomomi ; Sawada, Masanori

  • Author_Institution
    Oki Eng. co., Ltd., Tokyo, Japan
  • fYear
    2009
  • fDate
    Aug. 30 2009-Sept. 4 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper is described the ESD protection design technique for the integrated circuits, used the ESD parameter extracted by TLP (Transmission Line Pulsing) measurement. The ESD parameters need to simulate the ESD surge inflow phenomena into the devices accurately. This study find that it is most important for ESD parameter extraction conditions to be selected the suitable TLP calibration method and choose TLP-IV extraction timing to fit its device performance to simulate the ESD model. Also, it is proposed the location analysis method to choose TLP-IV timing as the new extraction in this paper.
  • Keywords
    MOSFET; electrostatic discharge; semiconductor device breakdown; surges; transmission lines; ESD protection design; ESD surge inflow phenomena; GGNMOS protection; NMOSFET; TLP measurement; TLP-IV timing; breakdown characteristic; electrostatic discharge; gate grounded N-type metal oxide semiconductor protection; integrated circuits; parameter extraction; transmission line pulsing measurement; Biological system modeling; Circuit simulation; Distributed parameter circuits; Electrostatic discharge; Parameter extraction; Protection; Semiconductor devices; Silicon on insulator technology; Timing; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    EOS/ESD Symposium, 2009 31st
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    978-1-58537-176-1
  • Electronic_ISBN
    978-1-58537-176-1
  • Type

    conf

  • Filename
    5340147