Title :
Diode isolation concept for low voltage and high voltage protection applications
Author :
Lin, Yen-Yi ; Duvvury, Charvaka ; Jahanzeb, Agha ; Vassilev, Vesselin
Author_Institution :
Diodes Inc., Dallas, TX, USA
fDate :
Aug. 30 2009-Sept. 4 2009
Abstract :
The diode isolation concept was exploited experimentally to grounded gate NMOS transistors and grounded gate DeNMOS transistors for robust ESD protections. The It2, holding voltage, and triggering voltage are improved by applying this concept. It is a novel optimization concept for both low voltage and high voltage ESD protection design.
Keywords :
CMOS logic circuits; MOSFET; electrostatic discharge; semiconductor diodes; CMOS dual oxide technology; ESD protection; diode isolation; electrostatic discharge protection; grounded gate DeNMOS transistors; grounded gate NMOS transistors; high voltage protection; holding voltage; triggering voltage; CMOS technology; Capacitance; Diodes; Electrostatic discharge; Isolation technology; Low voltage; MOS devices; MOSFETs; Protection; Robustness;
Conference_Titel :
EOS/ESD Symposium, 2009 31st
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-58537-176-1
Electronic_ISBN :
978-1-58537-176-1
