DocumentCode
505625
Title
High-current backside-illuminated InGaAs/InP p-i-n potodiode
Author
Itakura, Shigetaka ; Sakai, Kiyohide ; Nagatsuka, Tsutomu ; Akiyama, Tomohiro ; Hirano, Yoshihito ; Ishimura, Eitaro ; Nakaji, Masaharu ; Aoyagi, Toshitaka
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
fYear
2009
fDate
14-16 Oct. 2009
Firstpage
1
Lastpage
4
Abstract
We proposed a high-current backside-illuminated InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region, and demonstrated an RF power output of 29.0 dBm at 5 GHz, a 3-dB bandwidth of 7 GHz, and a third order intercept point of 31 dBm at 2 GHz using a 70-mum-diameter PD.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microwave photonics; p-i-n photodiodes; InGaAs-InP; RF power output; bandwidth 7 GHz; frequency 2 GHz; frequency 5 GHz; high-current backside-illuminated p-i-n photodiode; nonabsorbing drift region; partially depleted absorption layer; size 70 mum; third order intercept point; Absorption; Indium gallium arsenide; Indium phosphide; Optical fibers; Optical receivers; Optical transmitters; PIN photodiodes; Propagation losses; Radio frequency; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Photonics, 2009. MWP '09. International Topical Meeting on
Conference_Location
Valencia
Print_ISBN
978-1-4244-4788-6
Type
conf
Filename
5342695
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