Title :
Transient photoconductivity in InGaN/GaN multiple quantum wells, measured by time-resolved terahertz spectroscopy
Author :
Porte, H.P. ; Turchinovich, D. ; Cooke, D.G. ; Jepsen, P. Uhd
Author_Institution :
DTU Fotonik - Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
Terahertz conductivity of InGaN/GaN MQWs was studied by time-resolved terahertz spectroscopy. Restoration of the built-in piezoelectric field leads to a nonexponential carrier density decay. Terahertz conductivity spectrum is described by the Drude-Smith model.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconductivity; quantum well lasers; semiconductor quantum wells; time resolved spectroscopy; wide band gap semiconductors; Drude-Smith model; InGaN-GaN; multiple quantum wells; nonexponential carrier density decay; time-resolved terahertz spectroscopy; transient photoconductivity; Charge carrier density; Conductivity; Gallium nitride; Photoconductivity; Probes; Quantum well devices; Radiative recombination; Spectroscopy; Spontaneous emission; Submillimeter wave measurements;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343412
