Title :
Sub-10 nm patterning technique for site-controlled III-nitride quantum dot growth
Author :
Lee, L.K. ; Ku, P.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
An accurate and repeatable sub-10 nm patterning technique is proposed and demonstrated using atomic-layer deposition. Together with selective area epitaxy, this technique is suitable for the fabrication of III-nitride quantum dots.
Keywords :
III-V semiconductors; atomic layer deposition; epitaxial growth; nanopatterning; semiconductor quantum dots; wide band gap semiconductors; atomic-layer deposition; patterning technique; quantum dot growth; selective area epitaxy; Apertures; Atomic layer deposition; Epitaxial growth; Etching; Excitons; Fabrication; III-V semiconductor materials; Lithography; Quantum dot lasers; Quantum dots;
Conference_Titel :
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location :
Belek-Antalya
Print_ISBN :
978-1-4244-3680-4
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2009.5343413
