DocumentCode
505706
Title
Sub-10 nm patterning technique for site-controlled III-nitride quantum dot growth
Author
Lee, L.K. ; Ku, P.C.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2009
fDate
4-8 Oct. 2009
Firstpage
630
Lastpage
631
Abstract
An accurate and repeatable sub-10 nm patterning technique is proposed and demonstrated using atomic-layer deposition. Together with selective area epitaxy, this technique is suitable for the fabrication of III-nitride quantum dots.
Keywords
III-V semiconductors; atomic layer deposition; epitaxial growth; nanopatterning; semiconductor quantum dots; wide band gap semiconductors; atomic-layer deposition; patterning technique; quantum dot growth; selective area epitaxy; Apertures; Atomic layer deposition; Epitaxial growth; Etching; Excitons; Fabrication; III-V semiconductor materials; Lithography; Quantum dot lasers; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Conference_Location
Belek-Antalya
ISSN
1092-8081
Print_ISBN
978-1-4244-3680-4
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2009.5343413
Filename
5343413
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